Functional Inorganic Materials and Devices
- Kazuki Imasato*
Kazuki Imasato
Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
*Email: [emailprotected]
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- Shinichi Fujimoto*
Shinichi Fujimoto
KELK Ltd., 3-25-1 Shinomiya, Hiratsuka-shi, Kanagawa 254-8543 Japan
*Email: [emailprotected]
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- Yu Ikuta
Yu Ikuta
KELK Ltd., 3-25-1 Shinomiya, Hiratsuka-shi, Kanagawa 254-8543 Japan
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- Masanobu Miyata
Masanobu Miyata
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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- Noriyuki Saitoh
Noriyuki Saitoh
Electron Microscope Facility, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
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- Noriko Yoshizawa
Noriko Yoshizawa
Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
See AlsoMagnetic-Field-Assisted Fe Nanowire Conformable Aerogels Galvanically Displaced to Cu and Pt for Three-Dimensional Electrode ApplicationsUnraveling the Diversity of the Storage Mechanism in Carbonyl Materials toward Different Metal IonsDependence of Film Porosity on the Adsorption and Removal of Organic Contaminants from the Surface of Optical ComponentsSub-Millisecond and Energy-Efficient Electrochemical Synaptic Transistors with a Partially Reduced Graphene Oxide ChannelMore by Noriko Yoshizawa
- Atsushi Yamamoto
Atsushi Yamamoto
Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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- Takao Ishida
Takao Ishida
Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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- Mikio Koyano
Mikio Koyano
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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- Michihiro Ohta*
Michihiro Ohta
Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
*Email: [emailprotected]
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
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https://pubs.acs.org/doi/10.1021/acsami.5c02067
Published April 20, 2025
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To date, Bi2Te3-based systems are the most promising thermoelectric materials near room temperature for Peltier cooling and energy harvesting. Further improvement of the thermoelectric figure of merit zT is required to broaden the application of Bi2Te3-based thermoelectrics. In this study, we investigated the critical role of oxidation in the thermoelectric performance of p-type Bi0.45Sb1.55Te3 and proposed a way to improve the performance. Impurity oxides inevitably formed during the fabrication processes of constituent elements, leading to lowered mobility. To solve this problem, an oxygen getter element, Zn, was added to capture the oxygen from the Bi0.45Sb1.55Te3 matrix to increase the mobility. Moreover, the formed byproduct ZnO effectively scattered heat-carrying phonons simultaneously. The control of the oxidation process and the addition of Zn and Te led to a 30% enhancement in the zT of Bi0.45Sb1.55Te3 with the decoupling of improved electronic properties and reduced lattice thermal conductivity.
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- Atmospheric chemistry
- Oxidation
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- Oxygen
- Thermoelectrics
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
Published April 20, 2025
Publication History
Received
Accepted
Revised
Published
online
© 2025 American Chemical Society
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